GaN High Gain Internally Matched Power Transistors

Products

PRODUCTS

HXNM40009

Product Data Sheet

Overview

HXNM40009 is a gallium nitride internally matched power amplifier module, which adopts advanced in-plane matching synthesis technology and mature film hybrid integration technology, and has the characteristics of high power, high efficiency and temperature and other environmental adaptability.

Parameters

* Frequency: 5.1-5.9GHz
* Psat: ≥38dBm
* Gain: ≥18dB
* Efficiency: ≥30%
* Zin/Zout=50Ω

Application

* RF/Microwave Systems