GaN Internally Matched Transistors

Products

PRODUCTS

Overview

HXN40002 is a gallium nitride internal matching power transistor, which adopts advanced in-plane matching synthesis technology and mature film hybrid integration technology. The typical operating frequency band of the product is 0.9~1.2GHz, and it has the characteristics of high power, high efficiency and temperature and other environmental adaptability.

Parameters

* Frequency: 0.90-1.20GHz
Psat: ≥48dBm
Gain: ≥13dB
Efficiency: ≥55%
Zin/Zout=50Ω

Application

* RF/Microwave Systems