Overview
HX41157 is a high-power, high-efficiency in-gallium nitride matched power transistor. It is a die synthesis made with a 0.25um gate length HEMT process. It operates with dual power supply, the drain voltage VDS=28V, and can provide 47dBm of output power within 13.75-14.5GHz, the power gain is 5dB, and the power additional efficiency is 30%.
