Overview
HX41162 is a high-power, high-efficiency in-gallium nitride matched power transistor. It is a die synthesis made with a 0.25um gate length HEMT process. It operates with dual power supply, the drain voltage VDS=28V, and can provide 43dBm of output power within 14.9-15.1GHz, the power gain is 5dB, and the power additional efficiency is 30%.
