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GaN Internally Matched Transistors

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HX8695P100W

Product Data Sheet

Overview

HX8695P100W is a GaN internally matched power transistor used in standard communication bands to provide optimal power and gain performance in 50 ohm systems.

Parameters

* Frequency: 8.6GHz~9.5GHz 
* Output Power: 50.5dBm (typ.)
* Power Gain: 8.5dB (typ.)

* Power Added Efficiency: 45% (typ.)

* Metal Package

Application

* RF/Microwave Systems