Overview
HXN10001 chip is a high-performance 0.3~2GHz power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=28V and can provide 40dBm of output power within 0.3~2GHz.
