Overview
HXN10002 is a high-performance 1-8GHz high-power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies, and the drain voltage Vds=28V can provide 40dBm output power in 1~8GHz.
