Overview
HXN10008 is a high-performance 2 ~ 6 GHz high-power amplifier.It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies, and the drain voltage Vds=28V can provide 43dBm output power in 2 ~ 6GHz.
