Overview
HXN10010 is a high-performance 2~6GHz high-power amplifier. It's using a 0.25um gate-length GaN High Electron Mobility Transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=28V and can provide 44dBm of output power in 2~6GHz.
