Overview
HXN10011 is a high-performance 2~6.5GHz high-power amplifier fabricated using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It works with dual power supply, and the drain voltage Vds=28V can provide 32dBm output power in 2~6.5GHz.
