Overview
HXN10021 is a high-performance 2~20GHz power amplifier. It's using a 0.20um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies with a drain voltage of Vds=28V and can provide 40dBm of output power in 2~20GHz.
