Overview
HXN10024 is a high-performance 2.7~3.5 GHz power amplifier. It's using a 0.35um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vd=48V and can provide 45.5dBm of output power in 2.7~3.5 GHz.
