GaN Power Amplifiers (Bare Die)

Products

PRODUCTS

Overview

HXN10030 is a high-performance 5~6 GHz power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies with drain voltage Vd=28V and can provide 40dBm output power in 5~6 GHz.

Parameters

* Frequency: 5~6 GHz
* Typical Small Signal Gain: 25dB
* Typical Output Power: 40dBm@28V
* Typical Added Efficiency: 50%
* Process Type: 0.25um HEMT technology
* Bias: 28V, -1.8V(Typ.)
* Conditions of Use: CW
* Dimensions: 3.2mm× 2.3mm×0.08mm

Application

* Transceiver Components

* Wireless Communication