Overview
HXN10034 is a high-performance 5 ~ 6 GHz high power amplifier. It's using a 0.25 μm gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies, and the drain voltage Vds=28V can provide 48dBm output power in 5 ~ 6GHz.
