Overview
HXN10037 is a high-performance 5~12GHz high-power amplifier. It is using a 0.25um gate-length GaN High Electron Mobility Transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies, and the drain voltage Vds=28V can provide 42dBm output power in 5~12GHz.
