Overview
HXN10062 is 8-12GHz high-power, high-efficiency GaN Power Amplifier. It is fabricated using a 0.25um gate length GaN HEMT process. It operates with dual power supplies with drain voltage Vds=28V and Vg=-1.8V, which can provide 47dBm of output power in 8-12GHz, with a power gain of 19dB and a power added efficiency of more than 40%.
