Overview
HXN10070 is a high-performance 9~1GHz high-power amplifier, which is fabricated by a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
Specific description: HXN10070p works with dual power supply, and the drain voltage Vds=28V can provide 45.5dBm output power in 9~10GHz.
