Overview
HXN10071 is a high-performance 9~13 GHz high-power amplifier and fabricated using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies with a drain voltage of Vds=28V and can provide 45dBm of output power in 9~13 GHz.
