Overview
HXN10080 is a high-performance 14~18GHz power amplifier and fabricated using a 0.2um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies, and the drain voltage Vds=28V can provide 40dBm output power in 14~18GHz.
