Overview
HXN10109 is a high-performance 32~38GHz high-power amplifier. It's using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from a dual power supply with a drain voltage of Vds=24V and can provide 41dBm of output power over 32~38 GHz.
