Overview
HXN10112 is a high-performance 33 ~ 37GHz high-power amplifier. It's using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies, and the drain voltage Vds=24V can provide 43dBm output power in 33 ~ 37 GHz.
