Overview
HXN10116 is a high-performance 37~43 GHz high-power amplifier. It is using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. It operates from dual power supplies with a drain voltage of Vds=20V and can provide 39dBm of output power over 37~43 GHz with a power gain of 12dB.
