GaN HEMT die chip is used. The operating frequency range covers 0.8GHz~2.0GHz, with a typical saturated output power of 44.5dBm and a typical power gain of 28.5dB, which is suitable for pulse operation mode.
Parameters
* Frequency: 0.8GHz~2.0GHz * Saturated Output Power: 44.5dBm * Power Gain: 28.5dB * Power Added Efficiency: 45%
Application
* Microwave Transceiver Components * Microwave System
