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GaN Power Amplifiers (Packaged)

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HX1216P150WM

Product Data Sheet

Overview

HX1216P150WM is an L-band power amplifier module implemented by two-stage GaN devices, covering the operating frequency range of 1.2GHz~1.6GHz, saturated output power >51dBm, power gain greater than 36dB, suitable for pulse operation mode.

Parameters

* Frequency: 1.2GHz~1.6GHz 
* Power Gain: 36dB 
* Saturated Output Power: 51dBm 
* Drain Efficiency: 50% 
* Operating Voltage: +28V 
* Mode: Pulse

Application

* Radar

* Microwave Transceiver Components