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GaN Power Amplifiers (Packaged)

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HX3134P60WMA

Product Data Sheet

Overview

GaN HEMT die chip is used. The operating frequency range covers 3.1GHz~3.4GHz, with a typical saturated output power of 47.8dBm and a typical power gain of 12.3dB, which is suitable for pulse operation mode.

Parameters

* Frequency: 3.1GHz~3.4GHz 
* Saturated Output Power: 47.8dBm 
* Power Gain: 12.3dB 
* Drain Efficiency: 50% (typ.)

Application

* Microwave Transceiver Components
* Microwave System