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GaN Power Amplifiers (Packaged)

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PRODUCTS

HX3135P200WM

Product Data Sheet

Overview

GaN HEMT die chip is used. The operating frequency range covers 3.1GHz~3.5GHz, with a typical saturated output power of 53dBm and a typical power gain of 43dB, which is suitable for pulse operation mode. 

Parameters

* Frequency: 3.1GHz~3.5GHz 
* Saturated Output Power: 53dBm 
* Power Gain: 43dB 
* Power Added Efficiency: 50%  
* Operating Temperature: -55°C~+85°C

Application

* Microwave Transceiver Components
* Microwave System