LDMOS Transistors

Products

PRODUCTS

HX2221208B2

Product Data Sheet

Overview

The HX2221208B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Parameters

Application

ISM RF Energy