Overview
It is an X-band multifunction GaAs chip (MMIC) that integrates driver amplifier, power amplifier, switch, six-position attenuator, six-position phase shifter, control driver, and more, fabricated using a gallium arsenide pseudo-high electron mobility transistor (PHEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The chip operates from a +5V/-5V power supply, the control level signal is TTL, and the phase-shift attenuation is serial controlled.
