Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

Overview

HX0445F/HX0445P2 is a GaN RF power amplifier transistor with high efficiency and high gain for applications frequency up to 4GHz. It is available in both flanged and unflanged packages and operate in pulsed or continuous wave mode with a 28V supply.

Parameters

* Max Saturated Power: 62W
* Optimal Drain Efficiency: 76.2%

Application

* RF/Microwave Systems