Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

HX5060140P2

Product Data Sheet

Overview

HX5060140P2  is a 140W GaN RF power amplifier transistor with high efficiency and high gain for applications frequency in the 5-6GHz. Demo boards covering 5-6GHz applications at the same time, with output power up to 120W. It is available in an unflanged package and operates from a 28V supply mode.

Parameters

* Max Saturated Power: 81W
* Optimal Drain Efficiency: 62.8%

Application

* RF/Microwave Systems