Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

HX056010F5

Product Data Sheet

Overview

HX056010F5 GaN pre-matched power transistor is a pre-matched
power amplifier based on 0.5um GaN HEMT process, which can
provide more than 10W output power within 0.5~6GHz, with high
gain, high efficiency and wide frequency band. It can support CW, pulse or any modulated signal. This product adopts 4mm*4.5mm DFN package, which can be used by surface mount.


Parameters

* Frequency: 0.5 to 6 GHz
* Output Power(Psat) : 10 W
* Power Gain: 10dB@5.8GHz
* Typical DE (Psat): 55%@5.8GHz
* Operating Voltage: 28 V

Application

Base station
Radio relay station
Military radar
Civilian radar
Test instrumentation
Jammers
Functional Block Diag
Microwave oven