GaN Power Amplifiers (Bare Die)

Products

PRODUCTS

Overview

HXN10047 is a high-performance 7~8.5GHz driver amplifier. It's using a 0.25um gate-length GaN High Electron Mobility Transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The WFDN070085-P41 chip operates from a dual power supply with a drain voltage Vds=28V can provide 41dBm output power in 7~8.5GHz.

Parameters

* Frequency: 7~8.5GHz
* Typical Small-Signal Gain: 34dB
* Typical Output Power: 41dBm@28V
* Typical Added Efficiency: 45%
* Process Type: 0.25um HEMT technology
* Bias: 28 V, 0.8A (Typ)
* Dimensions: 3.2mm× 2.5mm×0.08mm

Application

* Transceiver Components

* Wireless Communication