GaAs High Gain Internally Matched Power Transistors

Products

PRODUCTS

HXCM40006

Product Data Sheet

Overview

HXCM40006 is a gallium arsenide internally matched power amplifier module that adopts advanced in-plane matching synthesis technology and mature thin film hybrid integration process. The typical operating frequency band of the product is 8.5~11GHz, with high gain, high efficiency and temperature. Environmental adaptability and other characteristics, it can be widely used in various RF/microwave systems

Parameters

* Frequency:8.5-11GHz
* Psat: ≥34dBm
* Gain: ≥23.5dB
* Efficiency: =40% (type)
* Zin/Zout=50Ω

Application

* RF/Microwave Systems