GaN High Gain Internally Matched Power Transistors

Products

PRODUCTS

HXNM40003

Product Data Sheet

Overview

HXNM40003 is a gallium nitride internally matched power amplifier module, which adopts advanced in-plane matching synthesis technology and mature film hybrid integration technology, and has the characteristics of high power, high efficiency and temperature and other environmental adaptability.

Parameters

* Frequency: 2.7-3.1GHz
* Psat: ≥36dBm
* Gain: ≥25dB
* Efficiency: ≥40%
* Zin/Zout=50Ω

Application

* RF/Microwave Systems