GaN Internally Matched Transistors

Products

PRODUCTS

Overview

HXN40029 is a gallium nitride internally matched power transistor, which adopts advanced in-plane matching synthesis technology and mature film hybrid integration technology, and has the characteristics of high power, high efficiency and temperature and other environmental adaptability.

Parameters

* Frequency: 2.2-2.4GHz
* Psat: ≥56dBm
* Gain: ≥12dB
* Efficiency: ≥50%
* Zin/Zout=50Ω

Application

* RF/Microwave Systems