Overview
HX41141 is a high-power, high-efficiency in-gallium nitride matched power transistor. It is a die synthesis made with a 0.25um gate length HEMT process. It operates with dual power supply, the drain voltage VDS=40V, and can provide 54dBm of output power within 9-10GHz, the power gain is 8dB, and the power additional efficiency is 40%.
