Overview
HXN10013 is a high-performance 2~6.5GHz high-power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The WFDN020065-P44 chip operates from a dual power supply with a drain voltage Vds=28V can provide 44dBm output power in 2~6.5GHz.
