Overview
HXN10019 is a high-performance 2~18GHz power amplifier fabricated using a 0.20um gate-length GaN High Electron Mobility Transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=28V and can provide 40dBm of output power in 2~18GHz.
