Overview
HXN10023 is a 2.7~3.5GHz power amplifier. It is using a 0.25um gate-length GaN transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies, with working voltages Vg=-2.3~-1.9V, Vd=28V, and can provide more than 41.5dBm of output power in 2.7~3.5GHz, with a linear gain of less than 32dB and a typical working current of 1.2A.
