Overview
HXN10030 is a high-performance 5~6 GHz power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies with drain voltage Vd=28V and can provide 40dBm output power in 5~6 GHz.
