Overview
HXN10038 is a high-performance 5~12GHz high-power amplifier, which is fabricated by a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It works with dual power supply, and the drain voltage Vds=28V can provide 47dBm output power in 5~12GHz.
