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GaN Power Amplifiers (Bare Die)

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HXN10040

Product Data Sheet

Overview

HXN10040 is a high-performance 5~14GHz high-power amplifier. It's using a 0.25um gate-length gallium nitride high electron mobility transistor (HEMT) process.
The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=28V and can provide 42dBm of output power in 5~14GHz.

Parameters

* Frequency: 5~14 GHz 

* Typical Small signal Gain: 30 dB

* Typical Output Power: 42 dBm @ 28 V

* Typical Additional Efficiency: 38%

* Process Type: 0.25um HEMT Technical

* Bias: 28 V, -2 V

* Conditions: Pulse

* Dimensions: 2.4mm×3.65mm×0.08mm

Application

* Transceiver Components

* Wireless Communication