GaN Power Amplifiers (Bare Die)

Products

PRODUCTS

Overview

HXN10044 chip is a high-performance 6~18GHz high-power amplifier.It's using a 0.20um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies, and the drain voltage Vds=28V can provide 38dBm output power in 6~18GHz.

Parameters

* Frequency: 6~18 GHz
* Typical Small Signal Gain: 24dB
* Typical Output Power: 41dBm@28V
* Typical Added Efficiency: 26%
* Process Type: 0.20um HEMT Technology
* Bias: 28 V, -1.8 V (Typ.)
* Conditions: CW
* Dimensions: 3.5mm× 3.55mm×0.08mm

Application

* Transceiver Components

* Wireless Communication