Overview
HXN10045 is a high-performance 6~18GHz high-power amplifier. It's using a 0.2um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with drain voltage Vds=28V and can provide 43dBm output power in 6~18GHz.
