Overview
HXN10052 is a high-performance 8~12GHz power amplifier. It's using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=28V and can provide 26dBm of output power in 8~12GHz.
