Overview
HXN10055 is a high-performance 8~12 GHz high-power amplifier. It's using a 0.25um gate-length GaN High Electron Mobility Transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back.
It operates from dual power supplies, with a drain voltage of Vds=28V, and can provide 38dBm of output power and 18dB power gain in 8~12 GHz.
