Overview
HXN10066 is a high-performance 8.5~10.5GHz high-power amplifier. It is using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from dual power supplies with a drain voltage of Vds=28V and can provide 44.5dBm of output power in 8.5~10.5GHz.
