Overview
HXN10073 is a high-performance 10~18GHz driver amplifier and fabricated using a 0.25um gate-length GaN electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It operates from a single power supply, and the drain voltage Vds=28V can provide 27dBm output power in 10~18GHz.
