Overview
HXN10084 is a high-performance 14~18GHz power amplifier and fabricated using a GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. It works with dual power supply, the drain working voltage is Vds=28V, and the output power is greater than 47dBm in the 14~18GHz frequency band.
