Overview
HXN10103 is a high-performance 26-40 GHz high-power amplifier. It is using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back.
It operates from a dual supply with a drain voltage of Vds=20V and can deliver 40dBm of output power over 26-40 GHz with a power gain of 12dB.
